Document Details
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Document Type |
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Article In Journal |
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Document Title |
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Growth and Electrical Characterization of TlInTe2 Single Crystal إنماء ودراسة الخواص الكهربائية لبلورة TlInTe2 أحـادية الطور |
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Subject |
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Growth and Electrical Characterization of TlInTe2 Single Crystal |
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Document Language |
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English |
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Abstract |
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High efficiency design for single crystal growth from melt based on Bridgman technique is constructed locally and used for growing TlInTe2 crystals. Measurements of Hall coefficient and DC electrical conductivity covering a temperature range from 158 to 473 K were conducted. The investigated samples have P-Type conductivity with RH of 2.3 × 109 cm3/coul. at room temperature and carrier concentrations as 2.81×109 cm-3. Energy gap ?Eg and ionization energy ?Ea were estimated as 0.72 eV and 0.113 eV, respectively. The diffusion coefficient, diffusion length, as well as relaxation time were evaluated, and the scattering mechanism of charge carrier was checked. |
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ISSN |
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1012-1319 |
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Journal Name |
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Science Journal |
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Volume |
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20 |
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Issue Number |
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2 |
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Publishing Year |
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1429 AH
2008 AD |
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Article Type |
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Article |
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Added Date |
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Sunday, September 29, 2013 |
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Researchers
| نجاة توفيق | Tawfeeg, Najat | Researcher | | |
| فاطمة باهبري | Bahabri, Fatmah | Researcher | | |
| مصطفى مبارك | Mubarak, Mostafa | Researcher | | |
| سهام الحربي | Alharbi, Seham | Researcher | | |
| أحمد الغامدي | Algamdi, Ahmed | Researcher | | |
| فرج الحازمي | Alhazmi, Faraj | Researcher | | |
| صالح الحنيطي | Alheniti, Saleh | Researcher | | |
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