Document Details

Document Type : Article In Journal 
Document Title :
Growth, Characterization and Electrical Anisotropy in Layered Chalcogenide Gallium Monosulphide Single Crystals
الإنماء البلوري والخصائص الكهربائية اللاتجاهية لبلورات أحادية شالكوجنيدية طبقية من مركب كبريتيد الجاليوم
 
Subject : Growth, Characterization and Electrical Anisotropy in Layered Chalcogenide Gallium Monosulphide Single Crystals 
Document Language : English 
Abstract : Single crystals of GaS were prepared by a modified of Bridgman technique. Measurements of electrical conductivity and Hall-coefficient are performed in a single crystal GaS parallel and perpendicular to c-axis. At room temperature the conductivity ratio (?? /?\\ ) is equal to ten. The study covers a wide range of temperature. It was found that the samples have p-type conductivity. In the intrinsic conduction region an energy gap of 2.5eV occured The ionization energy is determined. Very strong anisotropy in the hole mobility parallel and perpendicular to c-axis was observed. The scattering mechanism at low and high temperatures is checked. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 22 
Issue Number : 2 
Publishing Year : 1431 AH
2010 AD 
Article Type : Article 
Added Date : Tuesday, October 1, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
رقية حسين العرينيAloraini, Rogaia HussainResearcher  

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